Nanowires are considered both as promising building blocks for nano-scale devices and as an alternative route to access the physics of low dimensional systems. In III-N materials, the strain relaxation offered by nanowires overcomes the typical problem of high dislocation density. Furthermore, III-N nanowire heterostructures have opened a new pathway to create III-N quantum dots with a flexibility to tune the dot height and to adjust the material composition without the requirement of lattice mismatch as the quantum dot grown by in Stranski Krastanow growth mode. Currently, most of the studies on III-N quantum dots are oriented towards photonic aspects, while there are very few works focusing on probing such structures via electrical means.

Ses activités de recherche

Localisation faible, Supraconductivité dans les réseaux bidimensionnels, Effets de proximité et Microréfrigération électronique. Contribution au développement de plate-formes de nanofabrication au service de la recherche fondamentale, dont Nanofab.